Author(s): Shang, JM (Shang, Jimin); Qiao, S (Qiao, Shuai); Fang, JZ (Fang, Jingzhi); Wen, HY (Wen, Hongyu); Wei, ZM (Wei, Zhongming)

Source: CHINESE PHYSICS B Volume: 30 Issue: 9 Article Number: 097507 DOI: 10.1088/1674-1056/ac0cd1 Published: SEP 2021

Abstract: Exploring two-dimensional (2D) magnetic heterostructures is essential for future spintronic and optoelectronic devices. Herein, using first-principle calculations, stable ferromagnetic ordering and colorful electronic properties are established by constructing the VS2/C3N van der Waals (vdW) heterostructure. Unlike the semiconductive properties with indirect band gaps in both the VS2 and C3N monolayers, our results indicate that a direct band gap with type-II band alignment and p-doping characters are realized in the spin-up channel of the VS2/C3N heterostructure, and a typical type-III band alignment with a broken-gap in the spin-down channel. Furthermore, the band alignments in the two spin channels can be effectively tuned by applying tensile strain. An interchangement between the type-II and type-III band alignments occurs in the two spin channels, as the tensile strain increases to 4%. The attractive magnetic properties and the unique band alignments could be useful for prospective applications in the next-generation tunneling devices and spintronic devices.

Accession Number: WOS:000698472900001

ISSN: 1674-1056

eISSN: 2058-3834

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/ac0cd1