Author(s): Zhang, YH (Zhang, Yuheng); Yang, J (Yang, Jing); Zhao, DG (Zhao, Degang); Liang, F (Liang, Feng); Chen, P (Chen, Ping); Liu, ZS (Liu, Zongshun)

Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 36 Issue: 10 Article Number: 105010 DOI: 10.1088/1361-6641/ac19ec Published: OCT 2021

Abstract: Low-temperature AlN templates were grown directly on a sapphire c-plane (001) by a two-step growth method. The different AlN morphologies were observed, and the influence of the ammonia and trimethylaluminum flowrate on the AlN morphology was investigated separately. We found that only one parameter of V/III ratio is not enough for the discussion of AlN morphology. An increase of either the V or III precursor flowrate will lead to a decrease in the surface mobility of Al atoms and possibly cause the same kind of change in AlN morphology. A smooth AlN surface is acquired by adjusting the Al mobility to a suitable value that is neither too high nor too low.

Accession Number: WOS:000696682900001

ISSN: 0268-1242

eISSN: 1361-6641

Full Text: https://iopscience.iop.org/article/10.1088/1361-6641/ac19ec