Author(s): Ma, XL (Ma Xiao-Le); Guo, J (Guo Jie); Hao, RT (Hao Rui-Ting); Wei, GS (Wei Guo-Shuai); Wang, GW (Wang Guo-Wei); Xu, YQ (Xu Ying-Qiang); Niu, ZC (Niu Zhi-Chuan)

Source: JOURNAL OF INFRARED AND MILLIMETER WAVES Volume: 40 Issue: 5 Pages: 569-575 DOI: 10.11972/j.issn.1001-9014.2021.05.001 Published: OCT 2021

Abstract: Using GaSb bulk and InAs/GaSb superlattice as short wave and medium wave infrared absorbing materials respectively, a short/mid dual-band infrared detectors with NIPPIN structure were epitaxial growth and fabricated. HRXRD and AFM tests show the FWHM of zero order peak of InAs/GaSb superlattice and GaSb peak are 17. 57 arcsec and 19. 15 arcsec, respectively. Surface root mean square roughness RMS is 1. 82 angstrom under 10 mu m x 10 mu m. At 77 K, the maximum product RA of resistance and area of SiO2 passivated device is 5.58 x 10(5) Omega.cm(2), the dark current density is 5.27 x 10(-7) A.cm(-2), and side wall resistivity is 6.83 x 10(6)Omega.cm. After anodic sulfuration, the maximum RA of the device is 1.86 x 10(6) Omega.cm(2), the dark current density is 4.12 x 10(-7) A.cm(-2), and side wall resistivity is 4.49 x 10(7) Omega.cm. Sulfurization reduces dark current of the device by more than one order of magnitude and increases side wall resistivity by one order of magnitude under same bias. The spectral response of the sulfurization device was tested, the device has the bais polarity-dependent dual-band detection performance with low crosstalk. The 50% cutoff wavelengths of the short-wave and medium-wave channels are 1. 55 mu m and 4. 62 mu m, respectively. At 1. 44 mu m, 2. 7 mu m and 4 mu m , the responsivity are 0. 415 A/W, 0. 435 A/W and 0. 337 A/W , respectively.

Accession Number: WOS:000695031600001

ISSN: 1001-9014

Full Text: http://journal.sitp.ac.cn/hwyhmb/hwyhmben/ch/reader/view_abstract.aspx?file_no=2020252&flag=1