A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

In-plane magnetic field induced helicity dependent photogalvanic effect on the surface states of topological insulators (BixSb1-x)(2)Te-3

2021-09-23

 

Author(s): Chen, SZ (Chen, Shenzhong); Yu, JL (Yu, Jinling); Zhu, KJ (Zhu, Kejing); Zeng, XL (Zeng, Xiaolin); Chen, YH (Chen, Yonghai); Liu, Y (Liu, Yu); Zhang, Y (Zhang, Yang); Cheng, SY (Cheng, Shuying); He, K (He, Ke)

Source: JOURNAL OF APPLIED PHYSICS Volume: 130 Issue: 8 Article Number: 085305 DOI: 10.1063/5.0058706 Published: AUG 28 2021

Abstract: A hallmark signature of the three-dimensional (3D) topological insulator (TI) is that the spin-momentum locked massless Dirac fermions populate its surface states, where the carrier spins are locked to their momentum. Here, we report on the magnetic-field induced helicity dependent photogalvanic effect (MHPGE) of 3D TI thin films Bi2Te3 or (BixSb1-x)(2)Te-3 of different thicknesses excited by near-infrared (1064 nm) under an in-plane magnetic field. It is found that the MHPGE current J(cx) under the longitudinal geometry, i.e., J(cx) parallel to B-x, is induced by the Larmor procession, while that under the transverse geometry, i.e., J(cx) parallel to B-y, is mainly introduced by the hexagonal warping, which can be enhanced by the in-plane magnetic field. Our work demonstrates the possibility to tune the spin-polarized photocurrent of the surface states in 3D TIs via a magnetic field, which may be utilized to design new kinds of opto-spintronic devices. Published under an exclusive license by AIP Publishing.

Accession Number: WOS:000694997000002

ISSN: 0021-8979

eISSN: 1089-7550

Full Text: https://aip.scitation.org/doi/10.1063/5.0058706

 


关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明