Author(s): Zhang, Y (Zhang, Yi); Yang, CA (Yang, Cheng-Ao); Shang, JM (Shang, Jin-Ming); Chen, YH (Chen, Yi-Hang); Wang, TF (Wang, Tian-Fang); Zhang, Y (Zhang, Yu); Xu, YQ (Xu, Ying-Qiang); Liu, B (Liu, Bing); Niu, ZC (Niu, Zhi-Chuan)

Source: CHINESE PHYSICS B Volume: 30 Issue: 9 Article Number: 094204 DOI: 10.1088/1674-1056/abe930 Published: SEP 2021

Abstract: We report a GaSb-based type-I quantum well cascade diode laser emitting at nearly 2-mu m wavelength. The recycling of carriers is realized by the gradient AlGaAsSb barrier and chirped GaSb/AlSb/InAs electron injector. The growth of quaternary digital alloy with a gradually changed composition by short-period superlattices is introduced in detail in this paper. And the quantum well cascade laser with 100-mu m-wide, 2-mm-long ridge generates an about continuous-wave output of 0.8 W at room temperature. The characteristic temperature T (0) is estimated at above 60 K.

Accession Number: WOS:000694427400001

ISSN: 1674-1056

eISSN: 2058-3834

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/abe930