Author(s): Zhang, YT (Zhang, Yuting); Poddar, S (Poddar, Swapnadeep); Huang, H (Huang, He); Gu, LL (Gu, Leilei); Zhang, QP (Zhang, Qianpeng); Zhou, Y (Zhou, Yu); Yan, S (Yan, Shuai); Zhang, SF (Zhang, Sifan); Song, ZT (Song, Zhitang); Huang, BL (Huang, Baoling); Shen, GZ (Shen, Guozhen); Fan, ZY (Fan, Zhiyong)

Source: SCIENCE ADVANCES Volume: 7 Issue: 36 Article Number: eabg3788 DOI: 10.1126/sciadv.abg3788 Published: SEP 2021

Abstract: Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three types of methyl ammonium lead halide perovskites (MAPbX(3); X = Cl, Br, I) have been explored. A trade-off between device switching speed and retention time was intriguingly found. Ultrafast switching speed (200 ps) for monocrystalline MAPbI(3) and similar to 7 x 10(9) s ultralong extrapolated retention time for polycrystalline MAPbCl(3) NW devices were obtained. Further, first-principles calculation revealed that Ag diffusion energy barrier increases when lattice size shrinks from MAPbI(3) to MAPbCl(3), culminating in the trade-off between the device switching speed and retention time.

Accession Number: WOS:000695711400026

PubMed ID: 34516897

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Huang, Baoling         G-8685-2011         0000-0001-7507-5371

ISSN: 2375-2548

Full Text: https://www.science.org/doi/10.1126/sciadv.abg3788