Author(s): Bekele, ZA (Bekele, Zelalem Abebe); Li, RZ (Li, Runze); Li, YC (Li, Yucai); Cao, Y (Cao, Yi); Liu, XH (Liu, Xionghua); Wang, KY (Wang, Kaiyou)

Source: ADVANCED ELECTRONIC MATERIALS Article Number: 2100528 DOI: 10.1002/aelm.202100528 Early Access Date: SEP 2021

Abstract: Spin-orbit torque (SOT)-based magnetization switching is a promising candidate for the innovation and developments of spintronic devices. However, the necessity of an in-plane magnetic field to induce deterministic switching is an obstacle to feasibility in practical applications. Here, it is shown that the field-free current-induced magnetization switching in a perpendicular magnetized Pt1-xMox/Co/Ru heterostructure with x = 0, 0.04, 0.07, 0.12, and 0.17. Applying an in-plane charge current through the Pt1-xMox layer, the device can achieve a high-efficiency field-free current-induced magnetization switching with competing spin currents generated from a single Pt1-xMox alloy layer due to opposite spin Hall angles (theta(SHA)) of Pt and Mo atoms and locally induced electric field. Remarkably, the large theta(SHA) of about 0.35 is achieved in the optimal composition of Pt0.88Mo0.12 alloy, which is much higher than that of the pure Pt structure. The results pave the way to resolve the future problems of scalability and thermal stability for SOT-driven magnetic tunnelling junctions.

Accession Number: WOS:000692420000001

ISSN: 2199-160X

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/aelm.202100528