A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Necessity Analysis of Bypass Diode for AC Module under Partial Shading Condition

2021-09-09

 

Author(s): Ren, HX (Ren, Huixue); Han, PD (Han, Peide)

Source: ENERGIES Volume: 14 Issue: 16 Article Number: 4778 DOI: 10.3390/en14164778 Published: AUG 2021

Abstract: To protect a photovoltaic module from the hot spot effect more efficiently, an AC (alternating current) module that contains a module-level MPPT (maximum power point tracking) has been put forward. In this paper, operation states of shadowed solar cells and relevant bypass diodes were studied through MATLAB/Simulink tools, and a commercial PV module was used to reveal the temperature change when working at different LMPP (local maximum power point). Experiment results show that bypass diode can reduce power loss for the AC module to some extent but has a limited effect on protecting the AC module from the hot spot effect. Instead, it is more likely to form a local hot spot when the bypass diode turns on, and the worst shading condition for the AC module with bypass diode is about 46.5% during work states.

Accession Number: WOS:000689176000001

eISSN: 1996-1073

Full Text: https://www.mdpi.com/1996-1073/14/16/4778



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明