Author(s): Han, L (Han, Lin); Lin, J (Lin, Jie); Liu, J (Liu, Jun); Fahrenkrug, E (Fahrenkrug, Eli); Guan, YL (Guan, Yalu); Sun, K (Sun, Kai); Wang, YQ (Wang, Yiqun); Liu, K (Liu, Kong); Wang, ZJ (Wang, Zhijie); Wang, ZG (Wang, Zhanguo); Qu, SC (Qu, Shengchun); Jin, P (Jin, Peng)

Source: NANO LETTERS Volume: 21 Issue: 14 Pages: 5931-5937 DOI: 10.1021/acs.nanolett.1c00689 Published: JUL 28 2021

Abstract: Nanofabrication schemes usually suffer challenges in direct growth on complex nanostructured substrates. We provide a new technology that allows for the convenient, selective growth of complex nanostructures directly on three-dimensional (3D) homogeneous semiconductor substrates. The nature of the selectivity is derived from surface states modulated electrochemical deposition. Metals, metal oxides, and compound semiconductor structures can be prepared with high fidelity over a wide scale range from tens of nanometers to hundreds of microns. The utility of the process for photoelectrochemical applications is demonstrated by selectively decorating the sidewalls and tips of silicon microwires with cuprous oxide and cobalt oxides catalysts, respectively. Our findings indicate a new selective fabrication concept applied for homogeneous 3D semiconductor substrates, which is of high promise in community of photoelectronics, photoelectrochemistry, photonics, microelectronics, etc.

Accession Number: WOS:000679930400004

PubMed ID: 34176272

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Fahrenkrug, Eli                  0000-0002-7804-9117

ISSN: 1530-6984

eISSN: 1530-6992

Full Text: https://pubs.acs.org/doi/10.1021/acs.nanolett.1c00689