Author(s): Feng, XQ (Feng, Xiaoqiang); He, ZY (He, Zhengyi); Yu, LY (Yu, Lingyan); Liu, ZD (Liu, Zhiduo); Wang, G (Wang, Gang); Yang, SW (Yang, Siwei); Ding, GQ (Ding, Guqiao)

Source: JOURNAL OF MATERIALS CHEMISTRY C DOI: 10.1039/d1tc02461b Early Access Date: AUG 2021

Abstract: Vertically-aligned graphene arrays (VAGAs) are particularly attractive plasma materials that can be integrated with fluorine-doped tin oxide (FTO) substrates to generate multifunctional structures consisting of graphene plasma nanoresonators and VAGA/FTO Schottky heterojunctions that are ideal for doubly-reinforced Raman scattering. Herein, plasma-enhanced chemical vapor deposition (PECVD) is used to grow ultra-clean and size-controllable VAGAs on FTO in situ to use as substrates for surface-enhanced Raman scattering (SERS). The resulting surfaces exhibit excellent photoelectric properties, adsorption capacity, and high specific surface areas. These features enhance the electronic interactions between the VAGA, target molecules, and n-type semiconductor substrate, improving the chemical/charge-transfer effect in the heterojunctions. The hybrid SERS substrates are ultra-sensitive, reusable, low-cost, and highly stable as the VAGA effectively quenches interference from excited states. Our research reveals the effective carrier transfer mechanism acting in the VAGA-FTO heterostructure and improves upon the chemical/charge-transfer mechanism in graphene. It also constitutes a new method for developing ultra-sensitive devices.

Accession Number: WOS:000687742400001

ISSN: 2050-7526

eISSN: 2050-7534

Full Text: https://pubs.rsc.org/en/content/articlelanding/2021/TC/D1TC02461B