Performance and electron radiation damage of InAs/GaSb long-wave infrared detectors based on P pi MN design
Author(s): Wei, GS (Wei, Guoshuai); Hao, RT (Hao, Ruiting); Li, XM (Li, Xiaoming); Wang, YP (Wang, Yunpeng); Fang, SL (Fang, Shuiliu); Guo, J (Guo, Jie); Ma, XL (Ma, Xiaole); Ren, Y (Ren, Yang); Li, JN (Li, Junbin); Kong, JC (Kong, JinCheng); Wang, GW (Wang, Guowei); Xu, YQ (Xu, Yingqiang); Wu, DH (Wu, Donghai); Niu, ZC (Niu, Zhichuan)
Source: JOURNAL OF APPLIED PHYSICS Volume: 130 Issue: 7 Article Number: 075104 DOI: 10.1063/5.0055058 Published: AUG 21 2021
Abstract: We fabricated a high-performance InAs/GaSb type-II superlattice infrared detector. The tolerance of various sizes of detector irradiated with 1-MeV electrons was characterized. X-Ray Diffraction (XRD) and Atomic Force Microscope (AFM) measurements demonstrated the high quality of the materials. The response spectrum had a 50% cutoff wavelength of 8.85 mu m. Irradiation with 1-MeV electrons caused a significant increase in the dark current density from 2.54 x 10(-3) to 2.58 x 10(-1 )A/cm(2) at V-b = -0.03 V. The 1-MeV electron irradiation mainly caused displacements in the device, which had a significant impact on the generation-recombination dark current and surface leakage current.
Accession Number: WOS:000685806900007
ISSN: 0021-8979
eISSN: 1089-7550
