Author(s): Yang, J (Yang, J.); Zhang, YH (Zhang, Y. H.); Zhao, DG (Zhao, D. G.); Chen, P (Chen, P.); Liu, ZS (Liu, Z. S.); Liang, F (Liang, F.)

Source: JOURNAL OF CRYSTAL GROWTH Volume: 570 Article Number: 126245 DOI: 10.1016/j.jcrysgro.2021.126245 Published: SEP 15 2021

Abstract: The influence of resistivity for n-AlGaN is investigated by changing Si concentration, growth temperature and growth rate. It is found that the resistivity strongly depended on the growth conditions and it reaches to a small value of 5 x 10-3 omega cm at the growth temperature of 1040 degrees C. In addition, it is found that there is a strong correlation between the resistivity and the PL emission intensity of group-III-vacancy-Si (VIII-Si) complexes. It indicates that defect compensation can play a key role in high resistivity of n-AlGaN films.

Accession Number: WOS:000687380600001

ISSN: 0022-0248

eISSN: 1873-5002

Full Text: https://www.sciencedirect.com/science/article/pii/S0022024821002207?via%3Dihub