Author(s): Xie, SH (Xie, Shihong); Dey, A (Dey, Anubhab); Yan, WJ (Yan, Wenjing); Kudrynskyi, ZR (Kudrynskyi, Zakhar R.); Balakrishnan, N (Balakrishnan, Nilanthy); Makarovsky, O (Makarovsky, Oleg); Kovalyuk, ZD (Kovalyuk, Zakhar D.); Castanon, EG (Castanon, Eli G.); Kolosov, O (Kolosov, Oleg); Wang, KY (Wang, Kaiyou); Patane, A (Patane, Amalia)

Source: 2D MATERIALS Volume: 8 Issue: 4 Article Number: 045020 DOI: 10.1088/2053-1583/ac1ada Published: OCT 2021

Abstract: The miniaturization of ferroelectric devices offers prospects for non-volatile memories, low-power electrical switches and emerging technologies beyond existing Si-based integrated circuits. An emerging class of ferroelectrics is based on van der Waals (vdW) two-dimensional materials with potential for nano-ferroelectrics. Here, we report on ferroelectric semiconductor junctions (FSJs) in which the ferroelectric vdW semiconductor alpha-In2Se3 is embedded between two single-layer graphene electrodes. In these two-terminal devices, the ferroelectric polarization of the nanometre-thick In2Se3 layer modulates the transmission of electrons across the graphene/In2Se3 interface, leading to memristive effects that are controlled by applied voltages and/or by light. The underlying mechanisms of conduction are examined over a range of temperatures and under light excitation revealing thermionic injection, tunnelling and trap-assisted transport. These findings are relevant to future developments of FSJs whose geometry is well suited to miniaturization and low-power electronics, offering opportunities to expand functionalities of ferroelectrics by design of the vdW heterostructure.

Accession Number: WOS:000687840500001

ISSN: 2053-1583

Full Text: https://iopscience.iop.org/article/10.1088/2053-1583/ac1ada