A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

New mechanisms of cavity facet degradation for GaN-based laser diodes

2021-08-26

 

Author(s): Wang, XW (Wang, Xiao-Wei); Liu, ZS (Liu, Zong-Shun); Zhao, DG (Zhao, De-Gang); Chen, P (Chen, Ping); Liang, F (Liang, Feng); Yang, J (Yang, Jing)

Source: JOURNAL OF APPLIED PHYSICS Volume: 129 Issue: 22 Article Number: 223106 DOI: 10.1063/5.0051126 Published: JUN 14 2021

Abstract: We investigated the cavity facet degradation of unsealed GaN-based laser diodes (LDs). It was found that the decrease of optical output power accompanied by undulation for unsealed LDs is related to the facet degradation. Deposits containing Ga, Al, Si, and O were observed on the LD facet for the first time, explaining the reason for the degradation behavior. Considering the shorter wavelength of GaN-based laser diodes, we propose that the splitting of water molecules induced by high-energy photons triggers the oxidation of the facets and the deposition of SiO2. The shape of the deposits is closely correlated with the field distribution on the facet, influencing the LDs' output power. Improving the tightness of the package is necessary to avoid the fast degradation of GaN-based LDs.

Accession Number: WOS:000681700000001

ISSN: 0021-8979

eISSN: 1089-7550

Full Text: https://aip.scitation.org/doi/10.1063/5.0051126



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明