Author(s): Ren, F (Ren, Fang); Liu, BY (Liu, Bingyao); Chen, ZL (Chen, Zhaolong); Yin, Y (Yin, Yue); Sun, JY (Sun, Jingyu); Zhang, S (Zhang, Shuo); Jiang, B (Jiang, Bei); Liu, BZ (Liu, Bingzhi); Liu, ZT (Liu, Zhetong); Wang, JW (Wang, Jianwei); Liang, M (Liang, Meng); Yuan, GD (Yuan, Guodong); Yan, JC (Yan, Jianchang); Wei, TB (Wei, Tongbo); Yi, XY (Yi, Xiaoyan); Wang, JX (Wang, Junxi); Zhang, Y (Zhang, Yong); Li, JM (Li, Jinmin); Gao, P (Gao, Peng); Liu, ZF (Liu, Zhongfan); Liu, ZQ (Liu, Zhiqiang)

Source: SCIENCE ADVANCES Volume: 7 Issue: 31 Article Number: eabf5011 DOI: 10.1126/sciadv.abf5011 Published: JUL 2021

Abstract: Van der Waals epitaxy provides a fertile playground for the monolithic integration of various materials for advanced electronics and optoelectronics. Here, a previously unidentified nanorod-assisted van der Waals epitaxy is developed and nearly single-crystalline GaN films are first grown on amorphous silica glass substrates using a graphene interfacial layer. The epitaxial GaN-based light-emitting diode structures, with a record internal quantum efficiency, can be readily lifted off, becoming large-size flexible devices. Without the effects of the potential field from a single-crystalline substrate, we expect this approach to be equally applicable for high-quality growth of nitrides on arbitrary substrates. Our work provides a revolutionary technology for the growth of high-quality semiconductors, thus enabling the hetero-integration of highly mismatched material systems.

Accession Number: WOS:000682353100006

PubMed ID: 34330700

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Chen, Zhaolong                  0000-0002-6172-5713

ISSN: 2375-2548

Full Text: https://advances.sciencemag.org/content/7/31/eabf5011