High-Performance Broadband Photodetectors Based on n-MoS2/p-Ge0.9Sn0.1 Heterojunctions
Author(s): Shu, KX (Shu, Kaixiang); Gao, W (Gao, Wei); Wan, FS (Wan, Fengshuo); Yang, SH (Yang, Shuhui); Dan, Z (Dan, Zhiying); Wu, LW (Wu, Liangwei); Zhao, Q (Zhao, Qixiao); Xue, CL (Xue, Chunlai); Huo, NJ (Huo, Nengjie); Li, JB (Li, Jingbo)
Source: ACS APPLIED ELECTRONIC MATERIALS Volume: 3 Issue: 7 Pages: 3218-3225 DOI: 10.1021/acsaelm.1c00386 Published: JUL 27 2021
Abstract: P-N junctions are essential building blocks for electronic and optoelectronic devices and exhibit a wide range of applications in the field of photodetectors. In this work, high-performance self-powered photodetectors with spectral coverage ranging from the visible to near-infrared rrange (405-1310 nm) has been successfully fabricated by combining a p-type Ge0.9Sn0.1 thin film with an n-type multilayered molybdenum disulfide (MoS2) into a type-II band alignment. Benefiting from the great light absorption of the multilayer MoS2 and the high in-plane mobility of the moderate Sn-doped Ge0.9Sn0.1 film with a direct band gap, the constructed P-N heterojunction can effectively generate and separate the photogenerated carriers and lead to superior zero-biased photodetection performance. The device exhibited a fast response time of 200 mu s, an ultralow dark current of similar to 0.1 pA and high photoswitching ratio of similar to 10(4). In addition, the maximum values of photoresponsivity and detectivity are calculated to be 462 mA/W and 2.3 x 10(12) Jones, respectively. This work provides the new promising candidates for self-powered photodetectors toward broadband, fast speed, high sensitivity, and low power consumption.
Accession Number: WOS:000679394300035
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
huo, nengjie 0000-0003-2520-6243
eISSN: 2637-6113
