A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Multiband tunable perfect metamaterial absorber realized by different graphene patterns

2021-08-18

 

Author(s): Lv, Yisong; Tian, Jinping; Yang, Rongcao

Source: JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS Volume: 38 Issue: 8 Pages: 2409-2418 DOI: 10.1364/JOSAB.428026 Published: AUG 1 2021

Abstract: In this paper, the absorption performance of a proposed metamaterial (MM) absorber based on a three-layer graphene structure working in the terahertz (THz) frequency band is studied. By using different types of combined graphene patterns, dual-band, tri-band, and quad-band absorption can be achieved. In the case of tri-band absorption, three absorption peaks with absorption rates of 99.7%, 99.9%, and 99.9% can be found at frequencies of 4.64 THz, 6.45 THz, and 9.71 THz, respectively. In addition, the proposed structure is polarization independent and has the absorption characteristic of wide incident angles. The frequency and the intensity of the absorption peaks can be adjusted by changing the chemical potential and the relaxation time of the graphene and the structural parameters. Therefore, we believe that the proposed graphene MM absorber structure provides flexible design ideas for a multibandwidth MM perfect absorber, and the proposed absorber also can be applied to subwavelength integrated sensors and optoelectronic devices in the terahertz range. (C) 2021 Optical Society of America

Accession Number: WOS:000679997400033

ISSN: 0740-3224

eISSN: 1520-8540

Full Text: https://www.osapublishing.org/josab/fulltext.cfm?uri=josab-38-8-2409&id=453772



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明