A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Tunable Broadband Optoelectronic Oscillator Based on Integrated Mutually Coupled Distributed Feedback Lasers

2021-08-16

 

Author(s): Li, Yaobin; Zhao, Wu; Wang, Huan; Mao, Yuanfeng; Lu, Dan; Zhao, Lingjuan; Kan, Qiang

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 33 Issue: 15 Pages: 769-772 DOI: 10.1109/LPT.2021.3090680 Published: AUG 1 2021

Abstract: A photonic approach to generating an optoelectronic oscillator (OEO) based on an integrated mutually coupled (IMC) distributed feedback (DFB) laser is reported. Compared with the traditional construction of an OEO, the IMC-DFB has functions of the laser source, intensity modulator, and microwave photonic filters (MPFs), which could simplify the OEO scheme. An optical feedback loop (O-Loop) and an optoelectronic feedback loop (OE-Loop) are used simultaneously in the proposed scheme. The optical loop was used to reduce the optical linewidth of the IMC-DFB to improve the quality of the laser source in the OE loop. The IMC laser consisted of two distributed feedback (DFB) laser sections with a semiconductor optical amplifier (SOA) section in between. The optical linewidth of the IMC-DFB is reduced from 5.86 MHz to 3.94 kHz due to the feedback of the optical loop. By tuning the current of the SOA and DFB sections, tunable microwaves ranging from 24.9 to 46.5 GHz with single-sideband (SSB) phase noise below -110 dBc/Hz at a 10 kHz offset from the carrier were realized.

Accession Number: WOS:000673622800005

ISSN: 1041-1135

eISSN: 1941-0174

Full Text: https://ieeexplore.ieee.org/document/9459738



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明