Author(s): Fu, T (Fu, Ting); Wang, YF (Wang, Yufei); Zhou, XY (Zhou, Xuyan); Du, FL (Du, Fangling); Fan, J (Fan, Jian); Wang, XY (Wang, Xueyou); Chen, JX (Chen, Jingxuan); Qi, AY (Qi, Aiyi); Zheng, WH (Zheng, Wanhua)

Source: OPTICS EXPRESS Volume: 29 Issue: 13 Pages: 20440-20448 DOI: 10.1364/OE.423266 Published: JUN 21 2021

Abstract: Electrically injected Parity-time (PT)-symmetric double ridge stripe semiconductor lasers lasing at 980 nm range are designed and measured. The spontaneous PT-symmetric breaking point or exceptional point (EP) of the laser is tuned below or above the lasing threshold by means of varying the coupling constant or the mirror loss. The linewidth of the optical spectrum of the PT-symmetric laser is narrowed, compared with that of traditional single ridge (SR) laser and double ridge (DR) laser. Furthermore, the far field pattern of the PT-symmetric laser with EP below the lasing threshold is compared with that of the PT-symmetric laser with EP above the lasing threshold experimentally. It is found that when the laser start to lase, the former is single-lobed while the latter is double-lobed. when the current continues to increase, the former develops into double lobe directly while the latter first develops into single lobe and then double lobe again. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Accession Number: WOS:000664025900098

PubMed ID: 34266133

ISSN: 1094-4087

Full Text: https://www.osapublishing.org/oe/fulltext.cfm?uri=oe-29-13-20440&id=452048