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Negative Magnetoresistance in the GeSn Strip

2021-07-22

 

Author(s): Shu, KX (Shu, Kaixiang); Wang, N (Wang, Nan); Huo, NJ (Huo, Nengjie); Wan, FS (Wan, Fengshuo); Li, JB (Li, Jingbo); Xue, CL (Xue, Chunlai)

Source: ACS APPLIED MATERIALS & INTERFACES Volume: 13 Issue: 25 Pages: 29960-29964 DOI: 10.1021/acsami.1c06904 Published: JUN 30 2021

Abstract: Discovery of topological materials associated with an exotic phenomenon has attracted increasing attention in modern condensed matter physics. A typical example is the chiral anomaly proposed in the Dirac or Weyl semimetals. In addition to the well-known topological semimetals, such as TaAs and Na3Bi, recently, group IV GeSn alloys were also proposed to be Dirac semimetals in theory, demonstrating potential applications compatible with current Si-based technology. Here, we report the observation of large negative magnetoresistance (MR) that is sensitive to the orientation of the magnetic and electric field in the GeSn strip. This negative MR emerges only when the applied magnetic field is parallel to the electric field, which is consistent with the chiral anomaly in topological semimetals. This work paves a new way toward exploring the negative MR behavior and underlying mechanism in a new class of Dirac semimetals.

Accession Number: WOS:000670430100069

PubMed ID: 34128632

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

huo, nengjie                  0000-0003-2520-6243

ISSN: 1944-8244

eISSN: 1944-8252

Full Text: https://pubs.acs.org/doi/10.1021/acsami.1c06904



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