Author(s): Liu, ZB (Liu, Zhibin); Guo, YA (Guo, Yanan); Yan, JC (Yan, Jianchang); Zeng, YP (Zeng, Yiping); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin)

Source: APPLIED PHYSICS EXPRESS Volume: 14 Issue: 8 Article Number: 085501 DOI: 10.35848/1882-0786/ac114d Published: AUG 1 2021

Abstract: The polarity tuning of AlN films via introducing a period of trace oxygen supply in the initial sputtering process was demonstrated. High-temperature annealing was further implemented to improve the crystal quality of AlN. High-quality pure N-polar AlN film could be achieved by sputtering with pure N-2 gas. When trace oxygen was intentionally inputted in the sputtering chamber and its supply time surpassed 150 s, the AlN surface polarity transmitted to pure Al-polar. After optimization, the full widths at half of maximum of X-ray rocking curves for (0002)/(10-12) reflection were improved to 41.3/132.5 arcsec for N-polarity and 38.2/158.7 arcsec for Al-polarity.

Accession Number: WOS:000673430700001

ISSN: 1882-0778

eISSN: 1882-0786

Full Text: https://iopscience.iop.org/article/10.35848/1882-0786/ac114d