Author(s): Shi, DX (Shi, Daixing); Jiang, LJ (Jiang, Lijuan); Wang, Q (Wang, Quan); Feng, C (Feng, Chun); Xiao, HL (Xiao, Hongling); Li, W (Li, Wei); Wang, XL (Wang, Xiaoliang)

Source: OPTICS COMMUNICATIONS Volume: 497 Article Number: 127133 DOI: 10.1016/j.optcom.2021.127133 Published: OCT 15 2021

Abstract: The use of GaN photoconductive semiconductor switches (PCSSs) is plugged by the high local electric field at the electrode edges and the low on-state current in the sub-bandgap triggering mode. Therefore, a new highpower semi-insulating GaN PCSS structure, which is a quantum well coupled with a trench PCSS (QWTPCSS), is presented. The trench changes the electric field distribution. In the off state, the maximum electric field of the GaN QWTPCSS is 202.1 kV cm(-1), which is 60.57% lower than the 512.6 kV cm(-1) of the conventional structure. Moreover, the introduced AlGaN layer forms two-dimensional electron gases (2DEGs) in the conduction state; when triggered by a 532 nm laser, such 2DEGs contribute to the on-state current, which increases by 9.37% relative to that of the structure without AlGaN. These results demonstrate the potential of QWTPCSS to achieve high power.

Accession Number: WOS:000670303800018

ISSN: 0030-4018

eISSN: 1873-0310

Full Text: https://www.sciencedirect.com/science/article/pii/S0030401821003825?via%3Dihub