Author(s): Jia, LF (Jia, Li-Fang); Zhang, L (Zhang, Lian); Xiao, JP (Xiao, Jin-Ping); Cheng, Z (Cheng, Zhe); Lin, DF (Lin, De-Feng); Ai, YJ (Ai, Yu-Jie); Zhao, JC (Zhao, Jin-Chao); Zhang, Y (Zhang, Yun)

Source: MICROMACHINES Volume: 12 Issue: 6 Article Number: 617 DOI: 10.3390/mi12060617 Published: JUN 2021

Abstract: AlGaN/GaN E/D-mode GaN inverters are successfully fabricated on a 150-mm Si wafer. P-GaN gate technology is applied to be compatible with the commercial E-mode GaN power device technology platform and a systematic study of E/D-mode GaN inverters has been conducted with detail. The key electrical characters have been analyzed from room temperature (RT) to 200 degrees C. Small variations of the inverters are observed at different temperatures. The logic swing voltage of 2.91 V and 2.89 V are observed at RT and 200 degrees C at a supply voltage of 3 V. Correspondingly, low/high input noise margins of 0.78 V/1.67 V and 0.68 V/1.72 V are observed at RT and 200 degrees C. The inverters also demonstrate small rising edge time of the output signal. The results show great potential for GaN smart power integrated circuit (IC) application.

Accession Number: WOS:000666133600001

PubMed ID: 34071834

eISSN: 2072-666X

Full Text: https://www.mdpi.com/2072-666X/12/6/617