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On-chip four-mode (de-)multiplexer on thin film lithium niobate-silicon rich nitride hybrid platform

2021-07-15

 

Author(s): Liu, Y (Liu, Yang); Huang, XR (Huang, Xingrui); Li, ZZ (Li, Zezheng); Guan, H (Guan, Huan); Yu, ZG (Yu, Zhiguo); Wei, QQ (Wei, Qingquan); Fan, ZC (Fan, Zhongchao); Han, WH (Han, Weihua); Li, ZY (Li, Zhiyong)

Source: OPTICS LETTERS Volume: 46 Issue: 13 Pages: 3179-3182 DOI: 10.1364/OL.430515 Published: JUL 1 2021

Abstract: A four-mode (de-)multiplexer with transverse electric field light (TE0 - TE3) is experimentally demonstrated on a thin film lithium niobate-silicon rich nitride hybrid platform. Enabled by cascaded asymmetrical directional couplers, a (de-)multiplexer with low insertion loss (0.38 dB to 1.6 dB) and low cross talk (-18.46 dB to -20.43 dB) is obtained at 1550 nm. All channels have cross talk < 16 dB from 1480 nm to 1580 nm. The transmission of 4 x 50 Gbps on-off keying signals is experimentally achieved on the proposed (de-)multiplexer. Experimental results show that the proposed (de-)multiplexer is a promising approach to enhance the transmission capacity in thin film lithium niobate based photonics integrated circuits. (C) 2021 Optical Society of America

Accession Number: WOS:000668963500046

PubMed ID: 34197410

ISSN: 0146-9592

eISSN: 1539-4794

Full Text: https://www.osapublishing.org/ol/fulltext.cfm?uri=ol-46-13-3179&id=452758



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