Author(s): Zhang, S (Zhang, Shuo); Yan, Y (Yan, Yan); Feng, T (Feng, Tao); Yin, Y (Yin, Yue); Ren, F (Ren, Fang); Liang, M (Liang, Meng); Wu, CX (Wu, Chaoxing); Yi, XY (Yi, Xiaoyan); Wang, JX (Wang, Junxi); Li, JM (Li, Jinmin); Liu, ZQ (Liu, Zhiqiang)

Source: CRYSTALS Volume: 11 Issue: 6 Article Number: 686 DOI: 10.3390/cryst11060686 Published: JUN 2021

Abstract: InGaN-based micro-structured light-emitting diodes (mu LEDs) play a critical role in the field of full-color display. In this work, selected area growth (SAG) of a micro-pyramid LED array was performed on a 2-inch wafer-scale patterned SiO2 template (periodicity: 4 mu m diameter), by which a uniform periodic mu LED array was achieved. The single-element pyramid-shaped LED exhibited 6 equivalent semipolar {1-101} planes and a size of about 5 mu m, revealing a good crystalline quality with screw and edge dislocation densities of 8.27 x 10(7) and 4.49 x 10(8) cm(-2). Due to the stress-relaxation out of the SAG, the as-built compressive strain was reduced to 0.59 GPa. The mu LED array demonstrated a stable emission, confirmed by a small variation of electroluminescence (EL) peak wavelength over a wide range of current density up to 44.89 A/cm(2), as well as tiny fluctuations (within 1.9 nm) in the EL full width at half maximum. The photoluminescence peak wavelength exhibits a good uniformity throughout the whole wafer with a discrete probability of only 0.25%.

Accession Number: WOS:000665307100001

ISSN: 2073-4352

Full Text: https://www.mdpi.com/2073-4352/11/6/686