High-Performance Room-Temperature UV-IR Photodetector Based on the InAs Nanosheet and Its Wavelength- and Intensity-Dependent Negative Photoconductivity
Author(s): Wang, XZ (Wang, Xinzhe); Pan, D (Pan, Dong); Sun, M (Sun, Mei); Lyu, FJ (Lyu, Fengjiao); Zhao, JH (Zhao, Jianhua); Chen, Q (Chen, Qing)
Source: ACS APPLIED MATERIALS & INTERFACES Volume: 13 Issue: 22 Pages: 26187-26195 DOI: 10.1021/acsami.1c05226 Published: JUN 9 2021
Abstract: Low-dimensional narrow-band-gap III-V semiconductors have great potential in high-performance electronics, photonics, and quantum devices. However, high-performance nanoscale infrared photodetectors based on isolated two-dimensional (2D) III-V compound semiconductors are still rare. In this work, we demonstrate a new type of photodetector based on the InAs nanosheet. The photodetector has high optoelectronic response in the ultraviolet-infrared band (325-2100 nm) at room temperature. The high-performance photodetector has very high responsivity (similar to 1231 A/W), EQE (2.2 x 10(5) %), and detectivity (5.46 X 10(10) Jones) to 700 nm light at low operating voltage (similar to 0.1 V). These results indicate that 2D InAs nanosheet devices have great potential in nano-optoelectronic devices and integrated optoelectronic devices. In addition, we observe for the first time that the InAs nanosheet devices have a negative photoconductivity (NPC) that is not only affected by the wavelength but also related to the optical power intensity of the light. After analyzing experimental data, we propose that the origin of the NPC may come from electron trapping, and two competing mechanisms of optical absorption and the photogating effect in the photoelectric response process cause the dependence on the light wavelength and optical power intensity.
Accession Number: WOS:000662086600059
PubMed ID: 34032402
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
chen, qing C-9010-2009 0000-0002-7919-5159
ISSN: 1944-8244
eISSN: 1944-8252
