A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Broadband Photodetector Based on Inorganic Perovskite CsPbBr3/GeSn Heterojunction

2021-07-09

 

Author(s): Cong, H (Cong, Hui); Chu, XB (Chu, Xinbo); Wan, FS (Wan, Fengshuo); Chu, ZM (Chu, Zema); Wang, XY (Wang, Xiaoyu); Ma, Y (Ma, Yao); Jiang, JZ (Jiang, Jizhong); Shen, L (Shen, Liang); You, JB (You, Jingbi); Xue, CL (Xue, Chunlai)

Source: SMALL METHODS Article Number: 2100517 DOI: 10.1002/smtd.202100517 Early Access Date: JUN 2021

Abstract: Photodetectors with broadband response spectrum have attracted great interest in many application areas such as imaging, gas sensing, and night vision. Here, a high performance broadband photodetector is demonstrated with inorganic perovskite CsPbBr3/GeSn heterojunction, detection range can be covered from 450 to 2200 nm. The responsivity of heterojunction device can achieve as high as 129 mA W-1 under illuminated light of 532 nm, which is 4.92 times larger than that of a GeSn based device. As the CsPbBr3 can also act as anti-reflective coating for infrared wavelength, the infrared band responsivity at wavelength of 2200 nm can also be raised by 1.42 times. In addition, the device with all inorganic components is showed good stability, while keeping in the dry environment, the device can sustain its 90% original after 550 h storage. These results show the inorganic perovskite/GeSn heterojunction device is of great potential in broadband photodetection with high responsivity.

Accession Number: WOS:000664569800001

ISSN: 2366-9608

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/smtd.202100517



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明