A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Nonlayered In2S3/Al2O3/CsPbBr3 Quantum Dot Heterojunctions for Sensitive and Stable Photodetectors

2021-06-24

 

作者: Lu, JT (Lu, Jianting); Zhang, ML (Zhang, Menglong); Yao, JD (Yao, Jiandong); Zheng, ZQ (Zheng, Zhaoqiang); Tao, LL (Tao, Lili); Zhao, Y (Zhao, Yu); Li, JB (Li, Jingbo)

来源出版物: ACS APPLIED NANO MATERIALS 卷: 4 期: 5 页: 5106-5114 DOI: 10.1021/acsanm.1c00573 出版年: MAY 28 2021

摘要: Two-dimensional (2D) materials have attracted widespread research attention toward multiple optoelectronic applications, owing to their promising sensitivity to light. However, the weak light absorption and the insufficient effective photoconductive gain mechanism severely limit the performance of photodetectors based on 2D materials. Herein, by integrating the 2D In2S3 channel, Al2O3 tunneling layer, and CsPbBr3 photoactive layer, an ultrasensitive photodetector is demonstrated. The CsPbBr3 layer is exploited as an efficient light absorber and the component for the construction of type-II band arrangement with In2S3. The interlayer carrier coupling is blocked, and the spatial separation of photoinduced carriers is realized through quantum tunneling. In this respect, photoinduced holes are captured in CsPbBr3, accompanied with electrons recycled in In2S3, from which a high photoconductive gain is accomplished. Eventually, in detail, a responsivity of up to 2812 A/W, short rise/decay time of 144/32 mu s, and excellent detectivity of 2 x 10(15) Jones are assembled, reaching one of the best parameters of photodetectors based on 2D materials. Moreover, this vertical device structure enables the complete encapsulation of unstable CsPbBr3 by In2S3/Al2O3, preventing the cleavage of Pb-Br bonds in normal ambient conditions. This study provides a strategy to enhance the performances of the hybrid photodetector, along with the demonstration of important insights into advanced device designs for achieving high-performance optoelectronic devices.

入藏号: WOS:000657373800084

作者识别号:

作者        Web of Science ResearcherID        ORCID 号

Yao, Jiandong         R-6788-2018         0000-0003-3499-2928

ISSN: 2574-0970

Full Text: https://pubs.acs.org/doi/10.1021/acsanm.1c00573



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明