Author(s): Li, YX (Li, Yuxuan); Liu, XB (Liu, Xiaobin); Li, XT (Li, Xuetong); Wang, S (Wang, Shuai); Ye, H (Ye, Han); Zhang, LX (Zhang, Lanxuan); Li, YZ (Li, Yingzhi); Sun, SX (Sun, Shengxian); Chen, BS (Chen, Baisong); Ma, Y (Ma, Yao); Guo, PF (Guo, Pengfei); Gao, FL (Gao, Fengli); Li, XY (Li, Xueyan); Lo, GQ (Lo, Guoqiang); Song, JF (Song, Junfeng)

Source: OPTICS EXPRESS Volume: 29 Issue: 11 Pages: 16346-16361 DOI: 10.1364/OE.427343 Published: MAY 24 2021

Abstract: To address the problem of traditional surface illuminated detectors being of low responsivity, this work proposes a large-size interdigitated "finger-type" germanium-on-silicon (Ge-on-Si) photodetector (PD) based on the surface illumination approach. For 1550 nm light with a surface incident power of -20 dBm at room temperature, the best responsivity of the PD achieved is similar to 0.64 A/W at 0.5V. At the same time, the optimal bandwidth reaches 1.537MHz with 3.5V applied voltage. In order to suppress the dark current induced noise, a Ge-on-Si avalanche photodiode (APD) with the interdigitated structure is designed. The avalanche voltage is designed similar to 13.3V at room temperature, and the dark current density in linear region is at mA/cm(2) order. We believe this type of device can be applied in weak light detection condition. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing Agreement

Accession Number: WOS:000654369300037

ISSN: 1094-4087

Full Text: https://www.osapublishing.org/oe/fulltext.cfm?uri=oe-29-11-16346&id=450969