Author(s): Yang, MY (Yang, Meiyin); Li, YR (Li, Yanru); Luo, J (Luo, Jun); Deng, YC (Deng, Yongcheng); Zhang, N (Zhang, Nan); Zhang, XY (Zhang, Xueying); Li, SX (Li, Shaoxin); Cui, Y (Cui, Yan); Yu, PY (Yu, Peiyue); Yang, TZ (Yang, Tengzhi); Sheng, Y (Sheng, Yu); Wang, SM (Wang, Sumei); Xu, J (Xu, Jing); Zhao, C (Zhao, Chao); Wang, KY (Wang, Kaiyou)

Source: PHYSICAL REVIEW APPLIED Volume: 15 Issue: 5 Article Number: 054013 DOI: 10.1103/PhysRevApplied.15.054013 Published: MAY 6 2021

Abstract: We present an alternative mechanism to control domain wall motion, whose directions are manipulated by the amplitude of electrical current rather than its sign when modulating the exchange stiffness A while maintaining the Dzyaloshinskii-Moriya interaction constant D. To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting A of a Ta/Pt/Co/Ta multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed areas, which is due to current-induced Neel wall motion and a strong exchange coupling at this interface.

Accession Number: WOS:000647792600001

ISSN: 2331-7019

Full Text: https://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.15.054013