Author(s): Hou, YF (Hou, Yufei); Zhao, DG (Zhao, Degang); Liang, F (Liang, Feng); Liu, ZS (Liu, Zongshun); Yang, J (Yang, Jing); Chen, P (Chen, Ping)

Source: OPTICAL MATERIALS EXPRESS Volume: 11 Issue: 6 Pages: 1780-1790 DOI: 10.1364/OME.422378 Published: JUN 1 2021

Abstract: To obtain high performance of GaN-based laser diodes (LDs), three series of LDs are proposed, the effects of Al content of p-AlGaN cladding layer, as well as the material composition and

thickness of upper waveguide layer (UWG) are investigated separately. As the Al content increases, the threshold current and output power are found to improve significantly. Meanwhile, the optical

field distributed on the p-type side is reduced. Besides, the photoelectric characteristics of LDs are further improved when In0.03Ga0.97N/In0.01Ga0.99N UWG is used. Moreover, proper choice of the

In0.03Ga0.97N/In0.01Ga0.99N UWG thickness is necessary to achieve the high performance of GaN-based LDs. (C) 2021 Optical Society of America under the terms of the OSA Open Access Publishing

Agreement.

Accession Number: WOS:000656687500009

ISSN: 2159-3930

Full Text: https://www.osapublishing.org/ome/fulltext.cfm?uri=ome-11-6-1780&id=451278