Author(s): Ji, XL (Ji, Xiaoli); Fariza, A (Fariza, Aqdas); Zhao, J (Zhao, Jie); Wang, MJ (Wang, Maojun); Wang, JX (Wang, Junxi); Yang, FH (Yang, Fuhua); Li, JM (Li, Jinmin); Wei, TB (Wei, Tongbo)

Source: SEMICONDUCTOR SCIENCE AND TECHNOLOGY Volume: 36 Issue: 7 Article Number: 075003 DOI: 10.1088/1361-6641/ac00cf Published: JUL 2021

Abstract: A ridge-channel AlGaN/GaN high-electron mobility transistor (HEMT) utilizing selective-area growth and epitaxial lateral overgrowth (ELO) technique is proposed in this work to achieve

high-performance normally-off devices. It has a c-plane platform for the source and the drain contacts, and sidewalls of {10 (1) over bar1} lattice plane for the gate contact. The sidewalls have

characteristics of weak polarization and thin barrier, which are advantageous for realizing normally-off operation. Two ridge HEMTs with triangular and trapezoid channel are designed. Theoretical

simulation demonstrates a threshold voltage of 0.03 V for the sidewall channel with reduced polarization and barrier thickness, and a threshold voltage of 1.1-1.3 V for the ridge HEMTs assuming no

polarization charge in sidewall channel. The ridge-channel device also exhibits high saturation drain current. The ELO-based ridge-channel opens a new way to achieve normally-off AlGaN/GaN HEMT.

Accession Number: WOS:000655757000001

ISSN: 0268-1242

eISSN: 1361-6641

Full Text: https://iopscience.iop.org/article/10.1088/1361-6641/ac00cf