Author(s): Deng, YC (Deng, Yongcheng); Li, RZ (Li, Runze); Liu, XH (Liu, Xionghua)

Source: JOURNAL OF ALLOYS AND COMPOUNDS Volume: 874 Article Number: 159910 DOI: 10.1016/j.jallcom.2021.159910 Published: SEP 5 2021

Abstract: The Weyl antiferromagnet Mn3Sn has been recently attracting considerable attention due to its unique properties like a large anomalous Hall effect (AHE). To gain AHE in thin enough Mn3Sn film is urgently desired for its application in antiferromagnetic spintronics. Here, we investigated the variation of AHE with thickness of Mn3Sn films. We obtained a large AHE for Mn3Sn film as thin as 20 nm, and found the AHE is dependent on the relative crystalline for different thick samples. The phase diagram of Mn3Sn films having AHE that annealed at different temperatures with different thicknesses was acquired. Moreover, the current-induced AFM state switching was implemented in Mn3Sn (20 nm)/Pt (4 nm) sample. Our finding would pave the path for developing antiferromagnetic spintronics.

(c) 2021 Elsevier B.V. All rights reserved.

Accession Number: WOS:000653090500005

ISSN: 0925-8388

eISSN: 1873-4669

Full Text: https://www.sciencedirect.com/science/article/pii/S0925838821013190?via%3Dihub