Author(s): Islam, MR (Islam, Md Rasidul); Shifat, ASMZ (Shifat, A. S. M. Zadid); Liu, K (Liu, Kong); Li, QC (Li, Qicong); Yang, C (Yang, Cheng); Wang, ZJ (Wang, Zhijie); Qu, SC (Qu, Shengchun); Wang, ZG (Wang, Zhanguo)

Source: AIP ADVANCES Volume: 11 Issue: 4 Article Number: 045220 DOI: 10.1063/5.0039622 Published: APR 1 2021

Abstract: Currently, owing to its remarkable electro-mechanical, thermal, and optical properties, graphene has attracted tremendous attention in the research community as one of the most prominent materials in modern electronic technology. In recent years, the graphene field-effect transistor (G-FET) has exhibited outstanding radio frequency performance and unprecedented sensitivity. Generally, the contact or parasitic resistance significantly influences the different characteristics of a large area G-FET. In this work, we have determined the effect of contact resistance from different characteristics of a G-FET. We have found that contact or parasitic resistance has a meaningful impact on the device's different characteristics, i.e., transfer characteristics, transconductance, cut-off frequency, etc. The analytical results have indicated that the transconductance and cut-off frequency of a G-FET decrease significantly with a higher value of contact resistance. Thereafter, reducing contact resistance according to experimental conditions will predict revolutionary changes in fabrication technology for graphene-based devices.

Accession Number: WOS:000642011600006

eISSN: 2158-3226

Full Text: https://aip.scitation.org/doi/10.1063/5.0039622