Author(s): Zhuo, ZY (Zhuo, Zhiyao); Chen, H (Chen, Hao); Huang, JH (Huang, Junhui); Li, SL (Li, Shulun); Wang, J (Wang, Jian); Ding, K (Ding, Kun); Ni, HQ (Ni, Haiqiao); Niu, ZC (Niu, Zhichuan); Jiang, DS (Jiang, Desheng); Dou, XM (Dou, Xiuming); Sun, BQ (Sun, Baoquan)

Source: JOURNAL OF PHYSICAL CHEMISTRY LETTERS Volume: 12 Issue: 14 Pages: 3485-3489 DOI: 10.1021/acs.jpclett.1c00633 Published: APR 15 2021

Abstract: We have obtained an ultralong lifetime exciton emission in InAs/GaAs single quantum dots (QDs) when the QD films are transferred onto the Si substrate covered by Ag nanoparticles. It is found that when the separation distance from the QD layer (also the wetting layer) to the Ag nanoparticles is around 19 nm, the QD emission lifetime changes from approximately 1 to 2000 ns. A classical dipole oscillator model is used to quantitatively calculate the spontaneous radiation decay rate of the excitons in the wetting layer (WL), and the simulated calculation result is in good agreement with the experimental one, revealing that the long lifetime exciton emission is due to the existence of the dark state in the WL. The self-induced dark state stems from the destructive interference between the exciton emission field and the induced dipole field of the Ag nanoparticles.

Accession Number: WOS:000641216100002

PubMed ID: 33792330

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

zhuo, zhiyao                  0000-0002-6346-6807

Li, Shulun                  0000-0001-5894-9436

ISSN: 1948-7185

Full Text: https://pubs.acs.org/doi/10.1021/acs.jpclett.1c00633