Author(s): Zhang, HJ (Zhang, Hengjie); Cheng, CT (Cheng, Chuantong); Huang, BJ (Huang, Beiju); Zhang, H (Zhang, Huan); Chen, R (Chen, Run); Huang, YL (Huang, Yulong); Chen, HD (Chen, Hongda); Pei, WH (Pei, Weihua)

Source: JOURNAL OF PHYSICAL CHEMISTRY LETTERS Volume: 12 Issue: 14 Pages: 3600-3606 DOI: 10.1021/acs.jpclett.1c00704 Published: APR 15 2021

Abstract: Artificial synapses based on biological synapses represent a new idea in the field of artificial intelligence with future applications. Current two-terminal RRAM devices have developed tremendously due to the adjustable synaptic plasticity of artificial synapses. However, these devices still have some problems, such as current leakage and poor durability. Here, we demonstrate a Pt/NiOx/WO3-x:Ti/W memristor with a pn-type heterojunction and two metal-semiconductor contacts, which exhibits good rectification. Due to the change in the internal potential barrier, the devices possess multiconductance states under different pulse modulations and memory characteristics, similar to synapses. The rectification characteristics of the device exhibit stable enhancement and suppression behavior. Each device in the 10 x 10 cross array we constructed can be written correctly, which verifies that leakage current does not appear in the device. The structure proposed in this work has great significance for the integration of large-scale memristor cross arrays.

Accession Number: WOS:000641216100019

PubMed ID: 33822633

ISSN: 1948-7185

Full Text: https://pubs.acs.org/doi/10.1021/acs.jpclett.1c00704