A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Simulation Study of Performance Degradation in beta-Ga2O3 (001) Vertical Schottky Barrier Diodes Based on Anisotropic Mobility Modeling

2021-05-27

 

Author(s): Li, ZP (Li, Zhipeng); Wang, Q (Wang, Quan); Feng, C (Feng, Chun); Wang, Q (Wang, Qian); Niu, D (Niu, Di); Jiang, LJ (Jiang, Lijuan); Li, W (Li, Wei); Xiao, HL (Xiao, Hongling); Wang, XL (Wang, Xiaoliang)

Source: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY Volume: 10 Issue: 5 Article Number: 055005 DOI: 10.1149/2162-8777/abed98 Published: MAY 1 2021

Abstract: Beta-gallium oxide (beta-Ga2O3) devices exhibit the degradation of on-state characteristics compared with the theoretical expectation according the recent reports. Simulation of electrical properties in devices should, therefore, include model calibration valid up to such situation. In this paper, the anisotropic mobility modeling has been incorporated to calculate the electrical performances of beta-Ga2O3 (001) vertical SBDs. This model parameters were revised through a series of reported experimental data, which presents that the electron mobility anisotropic ratio of 7 between two orthogonal directions ([100] and the normal of (001) orientation), resulting in much reduced mobility perpendicular to the device surface. Additionally, the forward characteristics and reverse recovery properties of beta-Ga2O3 SBDs over range of 300-500 K were investigated by means of calibrated anisotropic mobility model. As a result, the on-resistance is much increased mainly leading to the degradation of the static forward mode, while a lower reverse current peak (Irr) for switching characteristics. The modified mobility modeling considering anisotropy provides a precise curve-fitting to the measurements of on-state characteristics of beta-Ga2O3 SBDs, enabling a more accurate prediction of device performance.

Accession Number: WOS:000649130000001

ISSN: 2162-8769

eISSN: 2162-8777

Full Text: https://iopscience.iop.org/article/10.1149/2162-8777/abed98



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明