Author(s): Li, T (Li, Tao); Song, WQ (Song, Wenqing); Wan, RQ (Wan, Rongqiao); Zhang, L (Zhang, Lei); Yan, JC (Yan, Jianchang); Zhu, WH (Zhu, Wenhui); Wang, LC (Wang, Liancheng)

Source: IEEE JOURNAL OF QUANTUM ELECTRONICS Volume: 57 Issue: 3 DOI: 10.1109/JQE.2021.3075543 Published: JUN 2021

Abstract: Ultraviolet detectors are widely used in space exploration, military affairs, and disinfection. To further improve the responsivity and response time, we propose and demonstrate AlN three-dimensional metal-semiconductor-metal (3D-MSM) and flip chip 3D-MSM (FC-3DMSM) ultraviolet detector here. The performance of devices with different etching depth and electrode spacing has been investigated using APSYS simulation. According to the simulation results, we fabricated 0.5 mu m-etched 3D-MSM (3D-MSM-0.5 mu m) and 1.3 mu m-etched FC-3DMSM (FC-3DMSM-1.3 mu m) devices. Response time is decreased by 29.3% and 13.8% for 3D-MSM-0.5 mu m and FC-3DMSM-1.3 mu m devices, and responsiveness exhibits a 20.5% and 46.6% improvement at 200nm, compared with traditional MSM device. This is due to varied internal electric field distribution of 3D-MSM and FC -3DMSM device configuration, which accelerates the collection of photo-generated carriers and improves the carrier collection efficiency. Our work should advance the development of nitrides ultraviolet detectors.

Accession Number: WOS:000648327400001

ISSN: 0018-9197

eISSN: 1558-1713

Full Text: https://ieeexplore.ieee.org/document/9415732