Author(s): Zhi, YS (Zhi, Yu-Song); Jiang, WY (Jiang, Wei-Yu); Liu, Z (Liu, Zeng); Liu, YY (Liu, Yuan-Yuan); Chu, XL (Chu, Xu-Long); Liu, JH (Liu, Jia-Hang); Li, S (Li, Shan); Yan, ZY (Yan, Zu-Yong); Wang, YH (Wang, Yue-Hui); Li, PG (Li, Pei-Gang); Wu, ZP (Wu, Zhen-Ping); Tang, WH (Tang, Wei-Hua)

Source: CHINESE PHYSICS B Volume: 30 Issue: 5 Article Number: 057301 DOI: 10.1088/1674-1056/abe37a Published: MAY 2021

Abstract: Si-doped beta-Ga2O3 films are fabricated through metal-organic chemical vapor deposition (MOCVD). Solar-blind ultraviolet (UV) photodetector (PD) based on the films is fabricated by standard photolithography, and the photodetection properties are investigated. The results show that the photocurrent increases to 11.2 mA under 200 mu W.cm(-2) 254 nm illumination and +/- 20 V bias, leading to photo-responsivity as high as 788 A.W-1. The Si-doped beta-Ga2O3-based PD is promised to perform solar-blind photodetection with high performance.

Accession Number: WOS:000647657400001

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Liu, Zeng         W-6460-2019         0000-0003-3215-7929

ISSN: 1674-1056

eISSN: 1741-4199

Full Text: https://iopscience.iop.org/article/10.1088/1674-1056/abe37a