Author(s): Yang, LL (Yang, Liangliang); Wei, JT (Wei, Jiangtao); Qin, YH (Qin, Yuanhao); Wei, L (Wei, Lei); Song, PS (Song, Peishuai); Zhang, ML (Zhang, Mingliang); Yang, FH (Yang, Fuhua); Wang, XD (Wang, Xiaodong)

Source: MATERIALS Volume: 14 Issue: 8 Article Number: 2075 DOI: 10.3390/ma14082075 Published: APR 2021

Abstract: Thermoelectric technology can achieve mutual conversion between thermoelectricity and has the unique advantages of quiet operation, zero emissions and long life, all of which can help overcome the energy crisis. However, the large-scale application of thermoelectric technology is limited by its lower thermoelectric performance factor (ZT). The thermoelectric performance factor is a function of the Seebeck coefficient, electrical conductivity, thermal conductivity and absolute temperature. Since these parameters are interdependent, increasing the ZT value has always been a challenge. Here, we report the growth of Cu2Se thin films with a thickness of around 100 nm by magnetron sputtering. XRD and TEM analysis shows that the film is low-temperature alpha-Cu2Se, XPS analysis shows that about 10% of the film's surface is oxidized, and the ratio of copper to selenium is 2.26:1. In the range of 300-400 K, the maximum conductivity of the film is 4.55 x 10(5) S m(-1), which is the maximum value reached by the current Cu2Se film. The corresponding Seebeck coefficient is between 15 and 30 mu V K-1, and the maximum ZT value is 0.073. This work systematically studies the characterization of thin films and the measurement of thermoelectric properties and lays the foundation for further research on nano-thin-film thermoelectrics.

Accession Number: WOS:000644517300001

PubMed ID: 33924108

eISSN: 1996-1944

Full Text: https://www.mdpi.com/1996-1944/14/8/2075