Author(s): Li, XL (Li, Xiuli); Peng, LZ (Peng, Linzhi); Liu, Z (Liu, Zhi); Zhou, ZQ (Zhou, Zhiqi); Zheng, J (Zheng, Jun); Xue, CL (Xue, Chunlai); Zuo, YH (Zuo, Yuhua); Chen, BL (Chen, Baile); Cheng, BW (Cheng, Buwen)

Source: PHOTONICS RESEARCH Volume: 9 Issue: 4 Pages: 494-500 DOI: 10.1364/PRJ.413453 Published: APR 2021

Abstract: We report the demonstration of a normal-incidence p-i-n germanium-tin (Ge0.951Sn0.049) photodetector on silicon-on-insulator substrate for 2 mu m wavelength application. The DC and RF characteristics of the devices have been characterized. A dark current density under -1 V bias of approximately 125 mA/cm(2) is achieved at room temperature, and the optical responsivity of 14 mA/W is realized for illumination wavelength of 2 mu m under -1 V reverse bias. In addition, a 3 dB bandwidth (f(3dB)) of around 30 GHz is achieved at -3 V, which is the highest reported value among all group III-V and group IV photodetectors working in the 2 mu m wavelength range. This work illustrates that a GeSn photodetector has great prospects in 2 mu m wavelength optical communication. (C) 2021 Chinese Laser Press

Accession Number: WOS:000636997400020

ISSN: 2327-9125

Full Text: https://www.osapublishing.org/prj/fulltext.cfm?uri=prj-9-4-494&id=449450