Author(s): Zhang, XF (Zhang, Xingfei); Li, Y (Li, Yan); Li, ZC (Li, Zhicong); Miao, ZL (Miao, Zhenlin); Liang, M (Liang, Meng); Zhang, YY (Zhang, Yiyun); Yi, XY (Yi, Xiaoyan); Wang, GH (Wang, Guohong); Li, JM (Li, Jinmin)

Source: PHOTONICS Volume: 8 Issue: 4 Article Number: 88 DOI: 10.3390/photonics8040088 Published: APR 2021

Abstract: Versatile applications call for InGaN-based light-emitting diodes (LEDs) to operate at ultra-high current densities with high quantum efficiency. In this work, we investigated the size-dependent effects of the electrical and optical performance of LEDs as increasing the current density up to 100 A/cm(2), which demonstrated that mini-strip flip-chip LEDs were superior option to achieve better performance. In detail, at a current density of 100 A/cm(2), the light output power density of these mini-strip LEDs was improved by about 6.1 W/cm(2), leading to an improvement in the wall-plug efficiency by 4.23%, while the operating temperature was reduced by 11.3 degrees C, as compared with the large-sized LEDs. This could be attributed to the increase in the sidewall light extraction, alleviated current crowding effect, and improved heat dissipation. This work suggests an array of mini-strip LEDs would provide an option in achieving higher luminescent efficiency at ultrahigh current injection conditions for various applications.

Accession Number: WOS:000643524100001

eISSN: 2304-6732

Full Text: https://www.mdpi.com/2304-6732/8/4/88