Author(s): Yan, Y (Yan, Yong); Yang, JH (Yang, Juehan); Du, J (Du, Juan); Zhang, XM (Zhang, Xiaomei); Liu, YY (Liu, Yue-Yang); Xia, CX (Xia, Congxin); Wei, ZM (Wei, Zhongming)

Source: ADVANCED MATERIALS Article Number: 2008761 DOI: 10.1002/adma.202008761 Early Access Date: APR 2021

Abstract: Exploring 2D ultrawide bandgap semiconductors (UWBSs) will be conductive to the development of next-generation nanodevices, such as deep-ultraviolet photodetectors, single-photon emitters, and high-power flexible electronic devices. However, a gap still remains between the theoretical prediction of novel 2D UWBSs and the experimental realization of the corresponding materials. The cross-substitution process is an effective way to construct novel semiconductors with the favorable parent characteristics (e.g., structure) and the better physicochemical properties (e.g., bandgap). Herein, a simple case is offered for rational design and syntheses of 2D UWBS GaPS4 by employing state-of-the-art GeS2 as a similar structural model. Benefiting from the cosubstitution of Ge with lighter Ga and P, the GaPS4 crystals exhibit sharply enlarged optical bandgaps (few-layer: 3.94 eV and monolayer: 4.50 eV) and superior detection performances with high responsivity (4.89 A W-1), high detectivity (1.98 x 10(12) Jones), and high quantum efficiency (2.39 x 10(3)%) in the solar-blind ultraviolet region. Moreover, the GaPS4-based photodetector exhibits polarization-sensitive photoresponse with a linear dichroic ratio of 1.85 at 254 nm, benefitting from its in-plane structural anisotropy. These results provide a pathway for the discovery and fabrication of 2D UWBS anisotropic materials, which become promising candidates for future solar-blind ultraviolet and polarization-sensitive sensors.

Accession Number: WOS:000641167900001

PubMed ID: 33876467

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

wei, zhong ming                  0000-0002-6237-0993

ISSN: 0935-9648

eISSN: 1521-4095

Full Text: https://onlinelibrary.wiley.com/doi/10.1002/adma.202008761