Selective area epitaxy of III-V nanostructure arrays and networks: Growth, applications, and future directions
Author(s): Yuan, XM (Yuan, Xiaoming); Pan, D (Pan, Dong); Zhou, YJ (Zhou, Yijin); Zhang, XT (Zhang, Xutao); Peng, K (Peng, Kun); Zhao, BJ (Zhao, Bijun); Deng, MT (Deng, Mingtang); He, J (He, Jun); Tan, HH (Tan, Hark Hoe); Jagadish, C (Jagadish, Chennupati)
Source: APPLIED PHYSICS REVIEWS Volume: 8 Issue: 2 Article Number: 021302 DOI: 10.1063/5.0044706 Published: JUN 2021
Abstract: Selective area epitaxy (SAE) can be used to grow highly uniform III-V nanostructure arrays in a fully controllable way and is thus of great interest in both basic science and device applications. Here, an overview of this promising technique is presented, focusing on the growth fundamentals, formation of III-V nanowire arrays, monolithic integration of III-V nanowire arrays on silicon, the growth of nanowire heterostructures, and networks of various shapes. The applications of these III-V nanostructure arrays in photonics, electronics, optoelectronics, and quantum science are also reviewed. Finally, the current challenges and opportunities provided by SAE are discussed.
Accession Number: WOS:000636725400002
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
Deng, Mingtang I-2692-2015 0000-0003-2809-6158
ISSN: 1931-9401
