Author(s): Ren, ZH (Ren, Zhihui); Wang, P (Wang, Pan); Zhang, K (Zhang, Kai); Ran, WH (Ran, Wenhao); Yang, JH (Yang, Juehan); Liu, YY (Liu, Yue-Yang); Lou, Z (Lou, Zheng); Shen, GZ (Shen, Guozhen); Wei, ZM (Wei, Zhongming)

Source: IEEE ELECTRON DEVICE LETTERS Volume: 42 Issue: 4 Pages: 549-552 DOI: 10.1109/LED.2021.3061705 Published: APR 2021

Abstract: The near-infrared (NIR) polarized photodetector has wide range of applications including the object identification. Wavelength of 1550 nm is the least loss band for transmission communication, and the study of photodetectors working at 1550 nm demonstrate special scientific and applied significances. GaSb has attracted tremendous attention in the field of photoelectric detection due to its suitbale band gap, high mobility, sensitivity, and good compatibility with modern microelectronics technology. In this work, a highly polarization-sensitive GaSb nanowire based photodetectors under short-wave near-infrared photoelectric detection is achieved. The device has a good optical detection ability in the near-infrared band, and showed the responsivity up to 77.3 A/W with the external quantum efficiency of 6.18 x 10(3)% (illumination intensity of 1.59 mW/mm(2)) under 1550 nm. Furthermore, obvious photocurrent anisotropy are investigated under the near infrared band from 808 nm to 1550 nm. The largest dichroic ratio reaches 3.3 at 1550 nm. These results indicate that GaSb nanowire based photodetectors are not only promising candidates for NIR detection but also have promising potentials in polarization sensitive applications.

Accession Number: WOS:000633394000024

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Yang, Juehan                  0000-0002-7379-1080

wei, zhong ming                  0000-0002-6237-0993

ISSN: 0741-3106

eISSN: 1558-0563

Full Text: https://ieeexplore.ieee.org/document/9361647