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High Power and Narrow Vertical Divergence Laser Diodes With Photonic Crystal Structure

2021-04-25

 

Author(s): Chen, ZH (Chen, Zhonghao); Qi, AY (Qi, Aiyi); Zhou, XY (Zhou, Xuyan); Qu, HW (Qu, Hongwei); Chen, JX (Chen, Jingxuan); Jia, YF (Jia, Yufei); Zheng, WH (Zheng, Wanhua)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 33 Issue: 8 Pages: 399-402 DOI: 10.1109/LPT.2021.3065963 Published: APR 15 2021

Abstract: High power and narrow vertical divergence lasers for the 980 nm wavelength range based on the photonic crystal (PC) structure are investigated. The structure of the PC layers and the position of the quantum well (QW) are optimized through mode analysis, which to maximize the output power of the PC laser. A broad area (BA) laser with 300 mu m width and 4 mm cavity length yields 41.8 W output with far-field divergence angles of 16.5 degrees in lateral and 16.8 degrees in vertical at full width at half maximum (FWHM) under continuous-wave (CW) 48 A operating current at 5 degrees C.

Accession Number: WOS:000633387300002

ISSN: 1041-1135

eISSN: 1941-0174

Full Text: https://ieeexplore.ieee.org/document/9378553



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