Anomalous Hall effect in graphene coupled to a layered magnetic semiconductor
Author(s): Song, HD (Song, Hua-Ding); Zhu, PF (Zhu, Peng-Fei); Fang, JZ (Fang, Jingzhi); Zhou, ZQ (Zhou, Ziqi); Yang, H (Yang, Huai); Wang, KY (Wang, Kaiyou); Li, JB (Li, Jingbo); Yu, DP (Yu, Dapeng); Wei, ZM (Wei, Zhongming); Liao, ZM (Liao, Zhi-Min)
Source: PHYSICAL REVIEW B Volume: 103 Issue: 12 Article Number: 125304 DOI: 10.1103/PhysRevB.103.125304 Published: MAR 11 2021
Abstract: Graphene is favorable to realize topological nontrivial state by introducing spin-orbit coupling and exchange field through the proximity effect. The recent discovery of van der Waals magnets allows great proximitized modulation on graphene by building atomically clean heterostructures. Here, we realize anomalous Hall effect in graphene coupling with a layered magnetic material, FexSn1-xS2. The anomalous Hall resistance and the carrier density show a nonmonotonous dependence on the back-gate voltage, indicating emergence of band-structure transformation. Furthermore, low-field quantum interference measurement shows the enhancement of spin-orbit coupling (SOC) in the heterostructure. Our findings confirm that graphene coupling to FexSn1-xS2 is an ideal platform that is likely to introduce a strong exchange field and SOC simultaneously, which has outstanding potential in realizing topological nontrivial states and spintronics.
Accession Number: WOS:000627564900006
Author Identifiers:
Author Web of Science ResearcherID ORCID Number
wei, zhong ming 0000-0002-6237-0993
Liao, Zhi-Min 0000-0001-6361-9626
ISSN: 2469-9950
eISSN: 2469-9969
Full Text: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.103.125304