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Anomalous Hall effect in graphene coupled to a layered magnetic semiconductor

2021-04-23

 

Author(s): Song, HD (Song, Hua-Ding); Zhu, PF (Zhu, Peng-Fei); Fang, JZ (Fang, Jingzhi); Zhou, ZQ (Zhou, Ziqi); Yang, H (Yang, Huai); Wang, KY (Wang, Kaiyou); Li, JB (Li, Jingbo); Yu, DP (Yu, Dapeng); Wei, ZM (Wei, Zhongming); Liao, ZM (Liao, Zhi-Min)

Source: PHYSICAL REVIEW B Volume: 103 Issue: 12 Article Number: 125304 DOI: 10.1103/PhysRevB.103.125304 Published: MAR 11 2021

Abstract: Graphene is favorable to realize topological nontrivial state by introducing spin-orbit coupling and exchange field through the proximity effect. The recent discovery of van der Waals magnets allows great proximitized modulation on graphene by building atomically clean heterostructures. Here, we realize anomalous Hall effect in graphene coupling with a layered magnetic material, FexSn1-xS2. The anomalous Hall resistance and the carrier density show a nonmonotonous dependence on the back-gate voltage, indicating emergence of band-structure transformation. Furthermore, low-field quantum interference measurement shows the enhancement of spin-orbit coupling (SOC) in the heterostructure. Our findings confirm that graphene coupling to FexSn1-xS2 is an ideal platform that is likely to introduce a strong exchange field and SOC simultaneously, which has outstanding potential in realizing topological nontrivial states and spintronics.

Accession Number: WOS:000627564900006

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

wei, zhong ming                  0000-0002-6237-0993

Liao, Zhi-Min                  0000-0001-6361-9626

ISSN: 2469-9950

eISSN: 2469-9969

Full Text: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.103.125304



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