A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

A reasonably designed 2D WS2 and CdS microwire heterojunction for high performance photoresponse

2021-04-23

 

Author(s): Zhou, YC (Zhou, Yuchen); Zhang, L (Zhang, Li); Gao, W (Gao, Wei); Yang, MM (Yang, Mengmeng); Lu, JT (Lu, Jianting); Zheng, ZQ (Zheng, Zhaoqiang); Zhao, Y (Zhao, Yu); Yao, JD (Yao, Jiandong); Li, JB (Li, Jingbo)

Source: NANOSCALE Volume: 13 Issue: 11 Pages: 5660-5669 DOI: 10.1039/d1nr00210d Published: MAR 21 2021

Abstract: Heterojunctions based on low-dimensional materials can combine the superiorities of each component and realize novel properties. Herein, a mixed-dimensional heterojunction comprising multilayer WS2, CdS microwire, and few-layer WS2 has been demonstrated. The working mechanism and its application in a photodetector are investigated. The multilayer WS2 and CdS microwire are utilized to provide efficient light absorption, while the few-layer WS2 is utilized to passivate interfacial impurity scattering. In addition, based on the reasonable band alignment of the components, three built-in electric fields are formed, which efficiently separate the photo-generated carriers and enhance the photocurrent. In particular, the photo-generated electrons are trapped in CdS, while the photo-generated holes circulate in the external circuit, leading to a high photoconductivity gain. Motivated by these, we constructed a device that exhibits a photoresponsivity of similar to 4.7 A W-1, a response/recovery time of 13.7/15.8 ms, and a detectivity of 3.4 x 10(12) Jones, which are much better than the counterparts. All of these clearly demonstrate the importance of advanced device designs for realizing high performance optoelectronic devices.

Accession Number: WOS:000632611200005

PubMed ID: 33724286

Author Identifiers:

Author        Web of Science ResearcherID        ORCID Number

Yao, Jiandong         R-6788-2018         0000-0003-3499-2928

Zheng, Z.Q.                  0000-0002-1699-2425

Zhang, Li                  0000-0001-9917-4518

Zhao, Yu                  0000-0002-1001-206X

ISSN: 2040-3364

eISSN: 2040-3372

Full Text: https://pubs.rsc.org/en/content/articlelanding/2021/NR/D1NR00210D#!divAbstract



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明