A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

Compensation mechanism of carriers within weakly coupled quantum wells

2021-04-23

 

Author(s): Zhang, YH (Zhang, Yahui); Zhao, YH (Zhao, Yunhao); Cai, CY (Cai, Chenyuan); Shang, JM (Shang, Jinming); Wu, YY (Wu, Yuyang); Zhang, Y (Zhang, Yu); Xu, YQ (Xu, Yingqiang); Liang, CY (Liang, Chongyun); Niu, ZC (Niu, Zhichuan); Shi, Y (Shi, Yi); Che, RC (Che, Renchao)

Source: APPLIED PHYSICS LETTERS Volume: 118 Issue: 12 Article Number: 122107 DOI: 10.1063/5.0045844 Published: MAR 22 2021

Abstract: The study of coupling effect (CE) within low-dimensional quantum structures is essential not only for the comprehensive understanding of quantum transport but also for improving the performances of photoelectric devices. Recently, electronically weakly coupled quantum well (QW) structures pave the way for low threshold lasing, but the related coupling mechanism has not been clarified yet. Here, we report the direct experimental evidence of compensation mechanism in the carrier migration process within weakly coupled double QWs (DQWs). It is proved that the leakage rate of charges could be modulated within the two InGaSb QWs of the DQW structure owing to CE. Compared to the single QW configuration, the dissipation of carriers from the QWs within the DQW structure is alleviated under an external field. Further, radiative recombination efficiency for the DQW structure could be enhanced to obtain a lower threshold power. Thus, it may be deduced that the carrier compensation effect between QWs profoundly impacts the multiple-QW laser performance.

Accession Number: WOS:000634944200001

ISSN: 0003-6951

eISSN: 1077-3118

Full Text: https://aip.scitation.org/doi/10.1063/5.0045844



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明