A Model of Dual Fabry-Perot Etalon-Based External-Cavity Tunable Laser Us...
Internal motion within pulsating pure-quartic soliton molecules in a fibe...
Enhanced light emission of germanium light-emitting-diode on 150 mm germa...
The Fabrication of GaN Nanostructures Using Cost-Effective Methods for Ap...
Negative-to-Positive Tunnel Magnetoresistance in van der Waals Fe3GeTe2/C...
Quantum Light Source Based on Semiconductor Quantum Dots: A Review
A High-Reliability RF MEMS Metal-Contact Switch Based on Al-Sc Alloy
Development of a Mode-Locked Fiber Laser Utilizing a Niobium Diselenide S...
Development of Multiple Fano-Resonance-Based All-Dielectric Metastructure...
Traffic Vibration Signal Analysis of DAS Fiber Optic Cables with Differen...
官方微信
友情链接

High Power and Narrow Vertical Divergence Laser Diodes With Photonic Crystal Structure

2021-04-23

 

Author(s): Chen, ZH (Chen, Zhonghao); Qi, AY (Qi, Aiyi); Zhou, XY (Zhou, Xuyan); Qu, HW (Qu, Hongwei); Chen, JX (Chen, Jingxuan); Jia, YF (Jia, Yufei); Zheng, WH (Zheng, Wanhua)

Source: IEEE PHOTONICS TECHNOLOGY LETTERS Volume: 33 Issue: 8 Pages: 399-402 DOI: 10.1109/LPT.2021.3065963 Published: APR 15 2021

Abstract: High power and narrow vertical divergence lasers for the 980 nm wavelength range based on the photonic crystal (PC) structure are investigated. The structure of the PC layers and the position of the quantum well (QW) are optimized through mode analysis, which to maximize the output power of the PC laser. A broad area (BA) laser with 300 mu m width and 4 mm cavity length yields 41.8 W output with far-field divergence angles of 16.5 degrees in lateral and 16.8 degrees in vertical at full width at half maximum (FWHM) under continuous-wave (CW) 48 A operating current at 5 degrees C.

Accession Number: WOS:000633387300002

ISSN: 1041-1135

eISSN: 1941-0174

Full Text: https://ieeexplore.ieee.org/document/9378553



关于我们
下载视频观看
联系方式
通信地址

北京市海淀区清华东路甲35号(林大北路中段) 北京912信箱 (100083)

电话

010-82304210/010-82305052(传真)

E-mail

semi@semi.ac.cn

交通地图
版权所有 中国科学院半导体研究所

备案号:京ICP备05085259-1号 京公网安备110402500052 中国科学院半导体所声明